Relocation of Si atoms in kilo-electron-volt and mega-electron-volt Si-ion irradiation of crystalline Si

Abstract

Ion-beam mixing of tracer $^{30}\mathrm{Si}$ impurity in crystalline Si sample, irradiated with 2.0\ifmmode\times\else\texttimes\fi{}${10}^{16}$ 100-keV and 2.0\ifmmode\times\else\texttimes\fi{}${10}^{17}$ 4-MeV $^{28}\mathrm{Si}$/${\mathrm{cm}}^{2}$ at room temperature, has been investigated in order to obtain knowledge about the displacement processes in ion bombardment of Si. The tracer $^{30}\mathrm{Si}$ impurity was deposited by implanting a fluence of 1\ifmmode\times\else\texttimes\fi{}${10}^{16}$ 10-keV $^{30}\mathrm{Si}$/${\mathrm{cm}}^{2}$ into Si(100) substrates. The mixing of the collisionally similar and chemically identical atoms was studied with the nuclear-resonance-broadening technique. In the simulation of the experimental data, the collisional mixing was described with a new computational method and analytical calculation. The results suggest that the collisional mixing is a dominant contribution to displacement processes in room-temperature ion bombardment of crystalline Si.