Anomalies in the low-temperature thermoelectric power of p-Bi2Te3 and Te associated with topological electronic transitions under pressure

Abstract

Thermoelectric power measurements have been carried out for the narrow-band semiconductors p -Bi 2 Te 3 and Te under pressures up to 2.5 GPa at liquid-helium temperatures. The dependences observed correlate with the data obtained by oscillation methods. These correlations allow one to use the thermoelectric power to search for topological electronic transitions in semiconductors.