Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching

J. Joshua Yang, John Paul Strachan, Qiangfei Xia, Douglas A. A. Ohlberg, Philip J. Kuekes, Ronald D. Kelley, William F. Stickle, Duncan R. Stewart, G. Medeiros‐Ribeiro, R. Stanley Williams

Advanced Materials · 2010 · 110 citations · 33 references

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Abstract

Thermal diffusion of Ti through Pt electrode forms Ti atom channels of 1 nm diameter along Pt grain boundaries, seeding switching centers and controlling nanoscale memristive switching. The image shows EFTEM maps of Ti overlaid on HRTEM images for a Si/SiO2 100 nm/Ti 5nm/Pt 15 nm sample in-situ annealed in ultrahigh vacuum at 250 °C for 1 hour.

References

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