High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping

Abstract

The temperature-dependent electronic structure and electron-phonon coupling of weakly doped supported graphene is studied by angle-resolved photoemission spectroscopy and ab initio molecular dynamics simulations. The electron-phonon coupling is found to be extremely weak, reaching the lowest value ever reported for any material. However, the temperature-dependent dynamic interaction with the substrate leads to a complex and dramatic change in the carrier density and type in graphene. These changes in the electronic structure are mainly caused by fluctuations in the graphene-substrate distance.