Japanese Journal of Applied Physics · 2010 · 15 citations · 26 references
Categoryquantum ElectronicsEngineeringElectron–phonon InteractionSemiconductor NanostructuresSemiconductorsSi SdqdsEnhanced Electron–phonon InteractionElectronic DevicesExperimental ObservationTunneling MicroscopyQuantum DotsQuantum MaterialsMaterials ScienceQuantum SciencePhysicsNanotechnologyQuantum DevicePhonon ModulationElectronic MaterialsApplied PhysicsPhononQuantum Devices
Silicon-based suspended double quantum dots (SDQDs) were fabricated to study and control the strength of the electron–phonon interaction. A distinctive and large inelastic tunneling was observed in single-electron transport measurement and well explained by the emission of phonons that interact strongly with electrons owing to the phonon modulation in the suspended film. The first time observation of the enhancement of the electron–phonon interaction in Si SDQDs as well as the good agreement between the experimental results and the theoretical simulations are encouraging preliminary results that allow us to envision the observation of the tailoring of the electron–phonon interaction in SDQDs.
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