Growth Characteristics of Rutile Film by Chemical Vapor Deposition

Abstract

Thin film rutile has been grown by the chemical vapor deposition reaction of TIC14 and 02 on silicon and a variety of oxide substrates over a range of temperatures (673~176 and reactant partial pressures (pwicl4-- ~ 2.9 x 10-2 to 9.28 X 10-1 Torr, Po2 ~ 2.5 x 10-1 to 760 Torr). At high oxygen partial pres-sures between 990 ~ to l l00 ~ the films have been found to contain the ruti le modification of TiO2 almost exclusively. Polycrystall ine deposits on silicon, fused quartz, and amorphous silica (thermally grown or chemically vapor deposited) substrates displayed some preferred growth orientation (fiber tex-ture). Epitaxial films were obtained on (001)-, (110)-and ( l l l)- ru t i l e, (100)-MgO, and (0001)-sapphire substrates at elevated temperatures. The process of chemical vapor deposition (CVD) has recently attracted considerable attention as a method of depositing thin films of refractory materials on a variety of substrates (1). However, very few data are