Fabrication of Silicon Oxide Nanodots with an Areal Density Beyond 1 Teradots Inch<sup>−2</sup>

Ji Xu, Sung Woo Hong, Weiyin Gu, Kim Y. Lee, David Kuo, Shuaigang Xiao, Thomas P. Russell

Advanced Materials · 2011 · 34 citations · 33 references

Concepts

Abstract

The combination of solvent annealing, surface reconstruction, and a tone-reversal etching procedure provides an attractive approach to utilize block copolymer (BCP) lithography to fabricate highly ordered and densely packed silicon oxide nano-dots on a surface. The obtained silicon oxide nano-dots feature an areal density of 1.3 teradots inch(-2) .

References

33