Lattice recovery of oxygen-implanted YBa2Cu3O7−δ superconductor

Abstract

The regrowth of an oxygen-implanted YBa2Cu3O7−δ thin film was studied by Rutherford backscattering, ion channeling, and x-ray diffraction studies. The atomic composition of the thin film was preserved even after a 1 h anneal at 990 °C, reflecting the high chemical stability of the material obtained by the pulsed laser deposition technique. Two distinct activation energies were determined during the regrowth process: 0.42±0.04 eV at lower temperatures, corresponding to epitaxial growth from the interface, and 0.18±0.03 eV at higher temperatures, presumably associated with homogeneous nucleation and reorientation.