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High Quality Ferroelectric Capacitor for FeRAM Applications
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2002
Year
Materials ScienceElectrical EngineeringFerroelasticsEngineeringFerroelectric Thin Filmcapacitorpztsol-gelferamFeram ApplicationsFerroelectric ApplicationCapacitor StructureFerroelectric MaterialsPiezoelectric MaterialsPiezoelectricityPiezoelectric MaterialThin FilmsLead TitanateFunctional Materials
Abstract Lead zirconate titanate (PZT) based ferroelectric capacitor using lead titanate (PT) as seeding layers has been prepared on silicon wafer by an improved sol-gel method. The novel ferroelectric capacitor has high dielectric constant of about 1200, ultralow leakage current density of 0.1nA/cm 2 , high remanent polarization of 20 w C/cm 2 at coercive field of about 30kV/cm, and almost fatigue free properties. The capacitor structure can be valuable for FeRAM applications. Keywords: Ferroelectric Thin FilmCapacitorPztSol-gelFeram