A one-dimensional model to predict the growth conditions of InxGa1−xAs alloy crystals grown by the traveling liquidus-zone method

The redistribution of solute atoms during the solidification of metals

William A. Tiller, Kenneth A. Jackson, J. W. Rutter et al. · Acta Metallurgica · 1953 · 1.7K citations

Materials Science, Engineering, Metallurgical Interaction +9

Homogeneous In0.3Ga0.7As crystal growth by the traveling liquidus-zone method

Kyôichi Kinoshita, Hirokazu Katō, M. Iwai et al. · Journal of Crystal Growth · 2001 · 58 citations

Liquidus-zone Method, Engineering, Crystal Growth Technology +4

Dynamic stressing of a liquid-liquid interface by tension

P. R. Williams, P. M. Williams, Stephen W. Brown · Journal of Physics D Applied Physics · 1999 · 54 citations

Cavitation, Cavitating Flow, Engineering +14

Growth of ternary InxGa1−xAs bulk crystals with a uniform composition through supply of GaAs

Kazuo Nakajima, T. Kusunoki, Chisato Takenaka · Journal of Crystal Growth · 1991 · 50 citations

Materials Science, Ii-vi Semiconductor, Engineering +8

Bridgman solidification of GaSb in space

Thierry Duffar, M. D. Serrano, C. D. Moore et al. · Journal of Crystal Growth · 1998 · 47 citations

Crystal Structure, Engineering, Physics +7