Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1986 · 40 citations · 0 references
Bombardment-induced Microstructural ChangesEngineeringHydrogen-bombardment-induced Structural ChangesTransmission Electron MicroscopyPhase MixturesSilicon On InsulatorIon ImplantationElectron MicroscopyMaterials ScienceCrystalline DefectsAtomic PhysicsDefect FormationSemiconductor Device FabricationHydrogenStructural StudiesMicrostructureSilicon DebuggingSurface ScienceApplied PhysicsHydrogen EmbrittlementHydrogen-bombarded Silicon
Hydrogen-bombardment-induced structural changes in single-crystal silicon were studied using ellipsometry and transmission electron microscopy techniques. Hydrogen ion energies ranged from 400 to 1900 eV and the total dose was about 5×1019 ions/cm2. Various degrees of damage and phase mixtures in the layers were identified. It was concluded that ellipsometry can be used effectively as a nondestructive characterizational tool for analyzing bombardment-induced microstructural changes in this material.