Anomalous values of interaction constants in the two-dimensional electron gas of a silicon metal-oxide-semiconductor field-effect transistor measured by parallel- and perpendicular-field magnetoconductivity

Abstract

Comprehensive measurements of magnetic-field and temperature dependence of electrical conductivity in the two-dimensional electron gas of a silicon metal-oxide-semiconductor field-effect transistor reveal unexpected values of interaction constants. Parallel-magnetic-field measurements show previously unseen dependencies on both temperature and carrier concentration, and these observations are corroborated by analysis of the temperature dependence of conductivity in both zero and small perpendicular magnetic fields.