Flexible picene thin film field-effect transistors with parylene gate dielectric and their physical properties

Abstract

Flexible picene thin film field-effect transistors (FETs) have been fabricated with parylene gate dielectric on polyethylene terephthalate substrates. The picene thin film FETs show p-channel output/transfer characteristics and the field-effect mobility μ reaches ∼1 cm2 V−1 s−1 in vacuum. The FET shows a clear O2 gas sensing effect and negligible hysteresis in the transfer curves, indicating a possible application of the transistor as O2 selective gas sensor. Furthermore, it has been found that the parylene gate dielectric can eliminate a reduction in on-state drain current caused by continuous bias-voltage application which is observed if a SiO2 gate dielectric is used.