Cryogenic and high temperature performance of 4H-SiC power MOSFETs

Abstract

The electrical performance of 4H-SiC Power MOSFETs is studied at temperatures from 93K to 473K. With the decrease of operation temperature, the threshold voltage is found to increase linearly whereas the on-resistance shows a minimum value within the whole temperature range. The rapid increase of on-resistance at lower temperature is ascribed to the presence of large densities of interface traps at the SiC/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interface. In addition, the breakdown voltage is also measured down to 93K and found to increase monotonously with temperature. A set of parameters, determining the breakdown voltage of 4H-SiC MOSFET at different temperatures, is put forward in this paper, by fitting the experimental data.