Highly stable blue-emission in semipolar (11-22) InGaN/GaN multi-quantum well light-emitting diode

Abstract

We demonstrate highly stable blue-emission on the semipolar (11-22) InGaN/GaN multi-quantum well light-emitting diode (LED) that has been prepared by the direct lateral-overgrowth method. The LED clearly displays bright blue-emission (λ ∼ 441 nm) with the reduced quantum-confined Stark effect. The variation of the emission-wavelength takes place only at the small injection-current range (<10 mA), and the net variation is less than 1.3 nm for wide driving-current ranges (5–100 mA). After the stabilization of light emission, the optical power is linearly increased with increasing the driving-current (1–1.8 mW). Additionally, the LED exhibits the stable light-polarization characteristics.