Cross Sectional Transmission Electron Microscopy of Zn Diffusion Induced Disordering of GaAlAs-GaAs Multiquantum-Well Structures

Abstract

Zn diffusion induced disordering of a GaAlAs-GaAs multiquantum-well (MQW) structure has been studied by cross sectional transmission electron microscopy. The disordering is found to occur uniformly along the lateral direction within a transition region of about 0.2 µm. The narrow width of the transition region is explained by the steep Zn concentration gradient of the diffusion front.