Interfaces in crystalline materials

Abstract

A brief review of the theoretical state of the art in the field of semiconductor interfaces is presented. It is shown that the important factor controlling the different semiconductor barrier heights is the density of states associated with the semiconductor dangling-bonds. passivated semiconductor surfaces present saturated dangling-bonds and have modified barrier heights. Results for hydrogen-passivated GaAs (110)-surfaces are presented; it is shown that the Schottky-barrier height formed by the deposition of a K-layer is sustantially changed by the hydrogen-passivation.