Publication | Closed Access
A microwave InP/SiO2 MISFET
39
Citations
3
References
1978
Year
N-type InpElectrical EngineeringEngineeringRf SemiconductorElectronic EngineeringMicrowave Inp/sio2 MisfetApplied PhysicsIdentical GeometryPower ElectronicsMicroelectronicsMicrowave EngineeringMicrowave Power GainSemiconductor Device
Microwave power gain of insulated gate field-effect transistors (FET’s) fabricated with 4-μm gate lengths on n-type InP is reported. The gain is comparable to that of GaAs Schottky gate devices of identical geometry.
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