Growth of Bismuth Layers on Si(100) Surfaces

Abstract

The adsorption of bismuth on Si(100) surfaces is studied by quadrupole mass spectrometry, LEED and AES. Two adsorption states are observed: one is a two-dimensional (first) phase with saturation coverage and the other a bulk-like (second) phase without saturation coverage. When the two-dimensional phase of Bi was formed at a high substrate temperature, the LEED patterns from the Si surfaces showed an Si(100)2×1 structure with weak fractional order spots. In the Auger amplitude vs. deposition time curves, break points were observed at the completion of the first-phase adsorption. These points shift towards the higher coverage side with decreasing substrate temperature during deposition in accordance with the increase in the amount of adsorbed bismuth atoms.