Publication | Open Access
Electronic structure characterization of La2NiMnO6 epitaxial thin films using synchrotron-radiation photoelectron spectroscopy and optical spectroscopy
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Citations
10
References
2009
Year
Materials ScienceIi-vi SemiconductorEpitaxial GrowthLa2nimno6 Epitaxial FilmsEngineeringOxide ElectronicsApplied PhysicsElectronic StructuresSemiconductor MaterialSynchrotron-radiation Photoelectron SpectroscopyThin FilmsOptical SpectroscopyMolecular Beam EpitaxyElectronic Structure CharacterizationMn 3DThin Film Processing
Electronic structures of La2NiMnO6 epitaxial films are characterized using synchrotron-radiation photoelectron spectroscopy and optical spectroscopy. X-ray absorption spectra reveal that the valence states of Ni2+ and Mn4+ are dominant. The electronic structure at the valence band maximum is mainly derived from the Mn 3d state. The conduction band minimum is composed mostly of the Mn 3d-O 2p hybridized state. The optical gap is estimated to be about 1.5 eV based on the optical conductivity derived from optical spectra.
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