Spin-Torque Oscillator Based on Magnetic Tunnel Junction with a Perpendicularly Magnetized Free Layer and In-Plane Magnetized Polarizer

Abstract

We fabricated a spin-torque oscillator (STO) having a nanopillar-shaped magnetic tunnel junction with perpendicularly magnetized FeB free and in-plane magnetized CoFeB reference layers. The perpendicular magnetization of the FeB was stabilized by strong perpendicular magnetic anisotropy induced at both the MgO tunnel barrier/FeB and FeB/MgO cap interfaces. Under a perpendicular field (3 kOe), the STO exhibited a large emission power (0.55 µW), a high frequency (6.3 GHz) and a high Q factor (135) simultaneously, all of which are the largest to date among nanopillar-shaped STOs. The bias voltage dependence of the oscillation property was well explained by the macrospin model.