IEEE Photonics Technology Letters · 1989 · 15 citations · 13 references
EngineeringElectrical EngineeringMicroelectronicsOptoelectronicsPhotonicsHigh-frequency Semiconductor DevicesLaser DiodesLaser PhysicsSemiconductor LasersBandwidth Of Electro-optic DevicesExternal-cavity LasersFrequency Shift KeyingLaser TuningLasersModulation BandwidthTunable Lasers
The FM response of frequency-tunable two-electrode distributed-feedback (DFB) lasers operating at 1.35 mu m is discussed. Under certain bias conditions, an FM response of approximately 1 GHz/mA is flat over a range of modulating frequencies from 10 kHz to several hundred megahertz. This region is followed by a shallow dip and a high-frequency relaxation resonance peak, allowing an overall 3-dB FM bandwidth of approximately 5 GHz. This is believed to be the widest FM bandwidth reported to date for such lasers; however, variations of the phase of the FM response could limit the useful bandwidth in a frequency-shift keying (FSK) system. The experimental response is a function of static tuning conditions, with significant differences between regions of red and blue frequency shift with increasing current. The observed behavior is well represented by theoretical curves derived from a small-signal analysis.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
13
Direct frequency modulation in AlGaAs semiconductor lasers
Soichi Kobayashi, Y. Yamamoto, Minoru Ito et al. · IEEE Journal of Quantum Electronics · 1982 · 458 citations