GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate

Abstract

A room-temperature continuous-wave operation under optical pumping was demonstrated with GaInAsP/InP membrane buriedheterostructure (BH) distributed-feedback (DFB) laser directly bonded on an SOI substrate. A threshold pump power of 2.8 mW and a sub-mode suppression ratio of 28 dB were obtained with a cavity length of 120 microm and a stripe width of 2 microm.