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Ultralow-threshold graded-index separate-confinement single quantum well buried heterostructure (Al,Ga)As lasers with high reflectivity coatings
98
Citations
10
References
1987
Year
EngineeringLaser ScienceLaser ApplicationsLaser MaterialThreshold CurrentsHigh-power LasersSmaller VolumeSemiconductor LasersOptical PropertiesHigh Reflectivity CoatingsMolecular Beam EpitaxyCompound SemiconductorMaterials SciencePhotonicsPhysicsQuantum DeviceLaser-assisted DepositionConventional Semiconductor LasersDepth-graded Multilayer CoatingApplied PhysicsMultilayer HeterostructuresQuantum Photonic DeviceOptoelectronics
Unlike conventional semiconductor lasers, single quantum well lasers with high reflectively coatings have dramatically reduced threshold currents as a result of the smaller volume of the (active) quantum well region. A cw threshold current of 0.95 mA was obtained for a buried graded-index separate-confinement heterostructure single quantum well laser with facet reflectivities of ∼70%, a cavity length of 250 μm, and an active region stripe width of 1 μm.
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