Low-voltage gallium–indium–zinc–oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application

Abstract

In this work a technology to fabricate low-voltage amorphous gallium–indium–zinc oxide thin film transistors (TFTs) based integrated circuits on 25 μm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2/V s. The technology is demonstrated with circuit building blocks relevant for radio frequency identification applications such as high-frequency functional code generators and efficient rectifiers. The integration level is about 300 transistors.