Dual-ion-beam sputter deposition of TiN films

Abstract

A dual-ion-beam technique for the deposition of TiN thin films is described. The metal-atom flux is supplied by sputtering a titanium target with an inert ion beam, while the reactive flux is supplied directly to the growing film by a low-energy ion beam. Results are presented for titanium films deposited at room temperature under a range of N+2 ion bombardment to form TiN. Analysis gives the incorporation of nitrogen, the background gas contamination, and the optical and electrical properties of TiN films.