Applied Physics Letters · 2008 · 108 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsPhotodetectorsPhotonic Integrated CircuitsSemiconductor DetectorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsDetectorsEpitaxial Thin FilmsPhotodetectionSchottky Barrier PhotodetectorsSchottky PhotodetectorsSilicon PhotodiodesSilicon WaveguidesWaveguide Photodetectors
Integrated silicon-on-insulator waveguide-based silicide Schottky-barrier photodetectors were fabricated using low-cost standard Si complementary metal-oxide-semiconductor processing technology. The thin epitaxial NiSi2 layer formed by solid-state Ti-interlayer mediated epitaxy on the top of Si-waveguide absorbs light propagating through the waveguide effectively and exhibits excellent rectifying property on both p-Si and n-Si. NiSi2∕p-Si detectors with tapered geometry demonstrate dark current of ∼3.0nA at room temperature, responsivity of ∼4.6mA∕W at wavelengths ranging from 1520to1620nm, and 3dB bandwidth of ∼2.0GHz. The approaches for further improvement in responsivity are addressed.
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