Electrochemical and Solid-State Letters · 2012 · 16 citations · 8 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials PhysicsSemiconductor MaterialsAmorphous MaterialsAmorphous SemiconductorsAmorphous SolidsChalcogenide GlassesDefects In Electronic MaterialsSemiconductor DefectsAmorphous Semiconductor FilmsAmorphous Thin FilmsDefect KineticsDefects In Amorphous MaterialsPhase-change MemoryRandom Access Memory (Ram)Stress Relaxation MechanismsStress Relaxation Modeling
Time-dependent drift of resistance in chalcogenide glasses leads to instabilities in phase-change random access memory (PCRAM). To reveal the origin of the resistance drift, mechanical stress relaxation and electrical resistance measurements were conducted on amorphous Ge2Sb2Te5 thin films under the same sample conditions. Resistance drift follows a power-law relationship with time, which is different from the trend observed for stress relaxation. The models that enable the time-dependence of resistance to be calculated from stress relaxation have been proposed and the calculated resistances were compared to the measured resistance. Our results show that the defect annihilation explains the drift phenomena successfully.
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Mechanical properties of thin films
William D. Nix · Metallurgical Transactions A · 1989 · 2.5K citations
Natural Sciences, Materials Engineering, Materials Science +15
Fundamental drift of parameters in chalcogenide phase change memory
I. V. Karpov, M. Mitra, D. Kau et al. · Journal of Applied Physics · 2007 · 187 citations