Quantum corrections to the resistance of Mo/Si multilayers

Abstract

We report on resistance and magnetoresistance measurements in multilayer Mo/Si samples at temperatures of 1.5--300 K and magnetic fields up to 6 T. The temperature dependence of the conductivity can be entirely described by quantum interference effects. The experimental results are compared with calculations of the quantum corrections due to weak localization, electron-electron interactions, and supeconducting fluctuations. The resistance shows a crossover from two-dimensional (2D) to 3D behavior when the temperature is increased.