Optics Letters · 2003 · 21 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesOptical Properties Of SemiconductorsQuantum OptoelectronicsQuantum WellsSemiconductor HeterostructuresSemiconductor LasersAntireflection CoatingsGain BandwidthQuantum Well GainQuantum Well HeterostructuresQuantum Well Laser DiodesQuantum Well StructuresSemiconductor Laser DiodesStrained Quantum Wells
Asymmetric multiple-quantum-well laser diodes with wide and flat gain spectra were designed, fabricated, and analyzed. The active layer was composed of three 10-nm, one 8-nm, and two 6-nm 0.5% compressive strained wells and four 10-nm and one 5-nm 0.4% tensile strained barrier layer. Measured spectra of antireflection-coated ridge waveguide laser diodes with such quantum-well structures have shown that -1-dB spectral gain bandwidth can be as large as 90 nm.
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