NMR Study on Electronic States in Phosphorus Doped Silicon

Abstract

Detailed study of NMR line shape and spin-lattice relaxation time has been carried out on phosphorus doped silicon with a purpose of making clear the nature of the electronic state in samples which show intermediate or metallic impurity conduction. On the basis of these observations previously published pictures for metallic transition were reexamined. A picture that the Anderson localized states with “intra” state correlation exist over a wide range of donor concentration, including the critical concentration of metallic transition, is shown to explain the observed properties in a consistent way.