The TeraMOS sensor for monolithic passive THz imagers

Abstract

We report of a new sensor, which is based on several leading technologies: THz photonics, CMOS-SOI (Silicon-on-Insulator) and MEMS/NEMS (Micro/Nano Electro Mechanical Systems). By introducing the TeraMOS sensor, which may be directly integrated with the CMOS-SOI readout circuitry, we expect to achieve a breakthrough in Terahertz passive imaging (0.5-1.5 THz) both in performance and cost. NEP (Noise Equivalent Power) of the order of 1 pW/Hz <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1/2</sup> and NETD (Noise Equivalent Temperature Difference) of ~0.5K is expected at room temperature. Preliminary electro-optical measurements are presented.