Electronics Letters · 1980 · 16 citations · 1 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsSemiconductor PhysicsDual-gate Field-effect TransistorsGaas Microwave Integrated CircuitsGaas Monolithic Microwave Integrated CircuitsInsertion GainMicrowave Phase Shifter DesignMicrowave TransistorsPhase ShiftersVoltage
A dual gate m.e.s.f.e.t. phase shifter is described with 4 dB insertion gain at 12 GHz and more than 100° linear continuous phase shift as a function of the d.c. voltage applied to the controlling gate electrode.
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Dual-Gate GaAs FET as a Frequency Multiplier at Ku-Band