High-Performance Thin Film Transistor with Amorphous In₂O₃–SnO₂–ZnO Channel Layer

Abstract

We have developed a high-mobility and high-processability oxide semiconductor using amorphous In 2 O 3 –SnO 2 –ZnO (a-ITZO) as the channel material. An a-ITZO thin-film transistor (TFT) was fabricated by a back-channel-etch process. Its field effect mobility was more than 20 cm 2 V -1 s -1 and its subthreshold swing was 0.4 V s -1 , which makes it a promising candidate for next-generation TFTs.