Microscopic-scale lateral inhomogeneities of the GaSe-Ge heterojunction energy lineup

Abstract

Scanning-photoemission-spectromicroscopy data revealed substantial inhomogeneities in the lineup of the electronic states at the interface between the two semiconductors GaSe and Ge. These inhomogeneities would lead to valence-band discontinuity changes from place to place, whose magnitude is approximately 0.4 eV.