Physical review. B, Condensed matter · 1995 · 13 citations · 12 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsCompound SemiconductorsElectronic Band StructurePhotoelectron SpectroscopySemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsElectronic Density Of StatesHeterojunction InterfacesHeterojunctionsInterfacial Electronic StructureSemiconductor HeterojunctionsValence BandValence Band StructureValence Electronic Structure
Scanning-photoemission-spectromicroscopy data revealed substantial inhomogeneities in the lineup of the electronic states at the interface between the two semiconductors GaSe and Ge. These inhomogeneities would lead to valence-band discontinuity changes from place to place, whose magnitude is approximately 0.4 eV.
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High-resolution x-ray microscopy using an undulator source, photoelectron studies with MAXIMUM
C. Capasso, Avijit K. Ray-Chaudhuri, W. Ng et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1991 · 54 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +15