EPR and TSCR investigations of implanted AlSiO2Si systems treated with RF plasma discharge

Abstract

RF-plasma treatment of ion-implanted Al–SiO2Si structures is shown to decrease the defect concentration considerably and to activate the doping impurity. When the face side of the wafer is treated defect annealing processes are increased considerably. Thermal desorption method shows that RF plasma treatment increases the hydrogen concentration in the semiconductor wafer. Hydrogen can be introduced into the wafer from the SiO2 layer as well as from gas discharge ambient. ESR demonstrates semiconductor crystalline structure ordering during RF-plasma annealing. A mechanism of vacancy defect annealing is proposed which takes into account deep level recharging and the role of atomic hydrogen. [Russian Text Ignore]