Design Method of Class-F Power Amplifier With Output Power of <formula formulatype="inline"><tex Notation="TeX">$-$</tex> </formula>20 dBm and Efficient Dual Supply Voltage Transmitter

Abstract

The efficiency of power amplifiers (PAs) with a small output power (POUT) for short-range wireless sensor networks is limited by the loss in matching networks. To achieve high efficiency, a new design method which calculates the complicated design parameters in a class-F PA with a merged filter and matching networks is proposed. The design method provides a new quantitative conclusion that reducing both the power supply voltage (VDD) and the impedance transformation ratio increases the efficiency of a PA with a small POUT. Using this result, a dual- VDD scheme is realized to increase the efficiency of a transmitter (TX). At a POUT of -20 dBm, compared with the conventional single- VDD scheme, the drain efficiency (DE) of the PA and the global efficiency (GE) of the TX with the dual- VDD scheme are increased by factors of 2.1 and 1.5, respectively. A PA fabricated by a 40 nm CMOS process achieved a DE of 42% at a POUT of -17 dBm. The TX with the PA achieves the highest GE of 28% at a POUT of -20 dBm and the lowest energy of 36pJ/bit ( =36 μW@1Mbps with on-off keying) among the published results for TXs.