Midinfrared electroluminescence from PbTe/CdTe quantum dot light-emitting diodes

Abstract

Midinfrared electroluminescence of epitaxial PbTe quantum dots in CdTe with emission in the 2–3 μm wavelength range is demonstrated up to room temperature. The light-emitting diode structures were grown by molecular beam epitaxy with the active PbTe quantum dots embedded in the intrinsic zone of a CdTe/CdZnTe p-i-n junction on GaAs (100) substrates. The current and temperature dependences of the electroluminescence emission are presented. The comparison with photoluminescence measurements shows that midinfrared light-emission from the diodes originates from the quantum dots.