CuO–SnO₂element as hydrogen sulfide gas sensor prepared by a sequential electron beam evaporation technique

Abstract

CuO–SnO2 thin film elements were prepared by sequential evaporation of Sn and Cu metals in high vacuum conditions by an electron beam evaporation technique and subsequent oxidation of the metallic bilayer under flowing oxygen conditions. The electrical properties of the thin film element were studied by a two probe method in the temperature range 110–220°C. On exposing the CuO–SnO2 thin films to a H2S–air mixture, it is observed that the resistance decreases by several thousand times. The H2S sensitivity of the thin film element was measured at three sensor operating temperatures. While the sensitivity decreased with an increase in temperature, both the response and recovery times improved with increasing temperature. The sensor element was selective to H2S gas and did not show any sensitivity to hydrogen and ethanol. The extraordinarily high sensitivity to H2S gas is attributed to the outstanding promoter action of CuO along with the unique porous structure of the thin film element as revealed by scanning electron microscopy studies.