Dislocation luminescence in nitrogen-doped Czochralski and float zone silicon

Abstract

This paper reports the results of a study of the effect of nitrogen on the optical properties of dislocations in nitrogen-doped Czochralski and nitrogen-doped float zone silicon samples here the nitrogen doping was carried out by adding Si3N4 in the molten silicon charge or by nitrogen gas dissolution. Dislocations were introduced by plastic deformation at 550 degreesC. In nitrogen-doped plastically deformed samples. emissions in the range of the D1-D4 bands of dislocations are present with a significant shifting from the energies and intensities of the corresponding bands in nitrogen-free samples. It has been shown that the main effect of nitrogen could be the enhancement of the oxygen precipitation. The results confirm the suggestion of some of the present authors that luminescence at 0.830 eV is associated with some intrinsic properties of oxygen precipitates.