Nonlinear I-V characteristics of nanotransistors in the Landauer-Büttiker formalism

Abstract

We present the nonlinear I-V characteristics of a nanoscale metal-oxide-semiconductor field-effect transistor in the Landauer-Büttiker formalism. In our three-dimensional ballistic model the gate, source, and drain contacts are treated on an equal footing. As in the drift-diffusion regime for ballistic transport a saturation of the drain current results. We demonstrate the quantum mechanism for the ballistic drain current saturation. As a specific signature of ballistic transport we find a specific threshold characteristic with a close-to-linear dependence of the drain current on the drain voltage. This threshold characteristic separates the ON-state regime from a quasi-OFF-state regime in which the device works as a tunneling transistor. Long- and short-channel effects are analyzed in both regimes and compared qualitatively with existing experimental data by Intel [B. Doyle et al., Intel Technol. J. 6, 42 (2002)].