Applied Physics Letters · 2008 · 125 citations · 21 references
EngineeringW Top ElectrodeBarium Strontium TitanateFerroelectric ApplicationNanoelectronicsThin Film ProcessingMaterials ScienceMaterials EngineeringElectrical EngineeringOxide ElectronicsSurface ElectrochemistryGallium OxideSemiconductor MaterialMicroelectronicsEndurance BehaviorElectrochemistryResistive SwitchingApplied PhysicsTop ElectrodesThin Films
We compared the resistive switching performance of barium strontium titanate (BST) thin films with tungsten (W) and platinum (Pt) top electrodes, respectively. The yield, endurance, and reliability were strongly improved for the samples with W top electrode. Whereas the samples with Pt top electrode show a fast drop in the resistance for both high and low resistance states, the devices with W top electrode can be switched for 104 times without any obvious degradation. We attribute the improved switching performance to a reversible oxidation and reduction in a WOx layer at the W-BST interface, which was detected by time-of-flight secondary-ion-mass spectroscopy measurements.
21
Nanoionics-based resistive switching memories
Rainer Waser, Masakazu Aono · Nature Materials · 2007 · 4.7K citations
Resistive switching in transition metal oxides
Akihito Sawa · Materials Today · 2008 · 2.9K citations · Full text
Materials Science, Non-volatile Memory, Electrical Engineering +15