Strained quaternary GaInAsP quantum well lasee emitting at 1.5 μm grown by gas source molecular beam epitaxy - Concepedia

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Strained quaternary GaInAsP quantum well lasee emitting at 1.5 μm grown by gas source molecular beam epitaxy

18

Citations

7

References

1992

Year

C. Starck, J.-Y. Emery, R. J. Simes, M. Matabon, Leon J. Goldstein, J. Barrau

Journal of Crystal Growth

EngineeringPhysicsQuantum DeviceApplied PhysicsMolecular Beam EpitaxyOptoelectronics

References

	Year	Citations

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