Heat-treatment effect on the nanosized graphite π-electron system during diamond to graphite conversion

B. L. V. Prasad, Hirohiko Sato, Toshiaki Enoki, Yoshihiro Hishiyama, Yutaka Kaburagi, Apparao M. Rao, P. C. Eklund, Kyoichi Oshida, Morinobu Endo

Physical review. B, Condensed matter · 2000 · 119 citations · 26 references

Concepts

Abstract

Graphite nanoparticles were prepared by the heat treatment of diamond nanoparticles in the range 900--1600 \ifmmode^\circ\else\textdegree\fi{}C. X-ray diffraction, transmission electron microscopy (TEM) and Raman scattering studies indicate that the onset temperature of the diamond-graphite transition is around 1200 \ifmmode^\circ\else\textdegree\fi{}C and the complete conversion of diamond to graphite occurs at 1600 \ifmmode^\circ\else\textdegree\fi{}C. Based on the structural characteristics the samples are categorized into ${\mathrm{sp}}^{3}$-dominated (as-prepared and 900 \ifmmode^\circ\else\textdegree\fi{}C), ${\mathrm{sp}}^{2}{:sp}^{3}$ mixed-phase (1200 and 1400 \ifmmode^\circ\else\textdegree\fi{}C), and ${\mathrm{sp}}^{2}$-dominated systems (1600 \ifmmode^\circ\else\textdegree\fi{}C). The larger c-axis repeat distances and the high-resolution TEM images for the ${\mathrm{sp}}^{2}{:sp}^{3}$ mixed-phase systems denote the presence of the remnant buckling feature of the diamond (111) planes in the graphene sheets. Magnetic susceptibility and ESR studies suggest the development of itinerant-\ensuremath{\pi}-electron system from the 1200 \ifmmode^\circ\else\textdegree\fi{}C and higher-temperature heat-treated samples. The completely graphitized sample reveals the important role of edge-inherited nonbonding \ensuremath{\pi}-electron states in the electronic structure. The Raman G-peak position and the orbital diamagnetism show considerable deviation from the bulk-graphite values, which is explained on the basis of charge transfer from the graphite \ensuremath{\pi} band to the localized edge states and the resulting shifting of the Fermi level. The enhanced spin-lattice relaxation rates in the case of more graphitized samples heat-treated at 1400 and 1600 \ifmmode^\circ\else\textdegree\fi{}C are expected to arise from the involvement of the localized edge-state electrons. In the less-graphitized 1200 \ifmmode^\circ\else\textdegree\fi{}C heat-treated sample, however, the corrugated nature of the graphene planes is likely to hinder such fast-relaxation processes.

References

26