Publication | Closed Access
Effect of a Transverse Magnetic Field on the Tunnel Current through Thick and Low Semiconductor Barriers
73
Citations
7
References
1987
Year
Wide-bandgap SemiconductorEngineeringBarrier Transversal TimeStatic MeasurementMagnetoresistanceSemiconductor DeviceMagnetismLow BarriersRf SemiconductorTunneling MicroscopyTunnel CurrentTunnelingElectrical EngineeringPhysicsTransverse Magnetic FieldMicroelectronicsCategoryiii-v SemiconductorSpintronicsApplied PhysicsCondensed Matter PhysicsLow Semiconductor BarriersMultilayer Heterostructures
The influence of a transverse magnetic field on tunnelling through GaAs/AlxGa1-xAs/GaAs heterostructures is investigated theoretically and experimentally. The effect is quite significant for the very thick and low barriers studied. It provides a simple way to determine the barrier transversal time introduced by Stevens, as well as Büttiker and Landauer, from a purely static measurement.
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