The parameters of polarization photosensitivity of isotropic semiconductors

Abstract

The phenomenon of polarization photosensitivity of isotropic semiconductors due to anisotropic transmission of linear polarized radiation (LPR) through the air–isotropic semiconductor interface is described. The parameters of polarization photosensitivity, such as the photopleochroism coefficient and the polarization quantum efficiency are shown as functions of the angle of oblique incidence, the semiconductor refraction index, and the incident photon energy. As follows from theoretical calculations and their experimental corroborations, isotropic semiconductor photodetectors can be used as LPR photoanalysers. [Russian Text Ignored].