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Photoluminescence study of ZnS/ZnMgS single quantum wells
18
Citations
15
References
1999
Year
Optical MaterialsEngineeringOptoelectronic DevicesLuminescence PropertySemiconductor NanostructuresSemiconductorsIi-vi SemiconductorQuantum MaterialsCompound SemiconductorMaterials ScienceQuantum ScienceShear Deformation PotentialsPhotoluminescencePhysicsOptoelectronic MaterialsPhotoluminescence StudyHeavy-hole Exciton EmissionApplied PhysicsQuantum Photonic DeviceOptoelectronicsMain Pl Peak
We report a photoluminescence (PL) study of ZnS/ZnMgS strained-layer single quantum wells. The main PL peak from ZnS is attributed to light-hole free excitons. Quantum confinement causes it to shift from 3.76 eV to higher energy, 3.84 eV, with decreasing well width. Hydrostatic and shear deformation potentials are determined from energies of light- and heavy-hole exciton emission, to be a=−6.4 eV and b=−1.0 eV, respectively.
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