Journal of Applied Physics · 1979 · 18 citations · 11 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistryPhysical ChemistryElectrical ConductivityStrongly Correlated Electron SystemsThermal Expansion AnalysisThermal Properties Of MaterialsThermal Properties Of SemiconductorsElectrical ResistivityMixed-valence ComplexesMixed-valence Semiconductor BehaviorResistivityTemperature DependenceTemperature Dependence Of Electrical PropertiesTemperature-dependent ResistivityThermal Expansion
We have measured the temperature dependence of the electrical resistivity and thermal expansion of La1−xCexSn3, CeSn2In and LaSn2In from 300K to 1.5K. The CeSn3 system is interesting because a variety of previous measurements seem to suggest that the Ce ions within this system may display intermediate valence behavior. Both the thermal expansion measurements and resistivity data for these systems are presented and compared to both other known mixed valence systems and predictions for concentrated Kondo systems.
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