Heterozyklische Verbindungen mit fünfgliedrigen ESi₄‐Ringen (E = Ga, In)

Abstract

Abstract Heterocyclic Compounds Containing Five‐membered ESi 4 Rings (E = Ga, In) Treatment of the dimeric indium(II) subhalide (In 2 R 2 Cl 2 ) 2 [R = C(SiMe 3 ) 3 ] possessing In‐In single bonds with the dipotassium tetrasilane dianion [K(18‐crown‐6) + ] 2 [Si(SiMe 3 ) 2 ‐SiMe 2 ‐SiMe 2 ‐Si(SiMe 3 ) 2 ] ( 1 ) did not yield the corresponding six‐membered In 2 Si 4 heterocycle by salt elimination. Instead cleavage of the In‐In bond occurred, and a compound containing a five‐membered InSi 4 heterocycle ( 2 ) was isolated in a low yield. An ionic compound was formed with the indium atoms of the anions coordinated by two silicon and two chlorine atoms. The counterion [K 2 (18‐crown‐6) 3 ] 2+ contained two potassium atoms bridged by a crown ether molecule. Compound 2 and the corresponding gallium derivative 3 were obtained on a specific route by the reaction of the tetrasilane dianion with indium or gallium trichloride.