Growth and characterization of ZnSe grown by organometallic vapor phase epitaxy using diisopropyl selenide and diethyl zinc

First-principles electronic structure of Si, Ge, GaP, GaAs, ZnS, and ZnSe. II. Optical properties

C. S. Wang, Bern Klein · Physical review. B, Condensed matter · 1981 · 237 citations

Natural Sciences, Materials Science, Physics +17

Optical Properties of ZnSe Epilayers and Films

J. Gutowski, N. Presser, G. Kudlek · physica status solidi (a) · 1990 · 205 citations

Natural Sciences, Materials Engineering, Materials Science +14

The role of impurities in refined ZnSe and other II–VI semiconductors

R. N. Bhargava · Journal of Crystal Growth · 1982 · 189 citations

Engineering, Materials Engineering, Materials Science +14

Comparison of MOCVD-Grown with Conventional II-VI Materials Parameters for EL Thin Films)

P. J. Dean · physica status solidi (a) · 1984 · 173 citations

Engineering, Materials Engineering, Materials Science +17

The effect of lattice deformation on optical properties and lattice parameters of ZnSe grown on (100)GaAs

Takafumi Yao, Yasumasa Okada, Susumu Matsui et al. · Journal of Crystal Growth · 1987 · 158 citations

Natural Sciences, Materials Science, Physics +17